MoSys RAM chip marking & reference


On chip top SGRAM
MG802C
MOSYS 512Q-8
D20B9400AAE 9831
MDRAM
MD909
SJ-5-100
  MC803256K32L-10 I
 

MoSys RAM chip marking
MOSYS www.mosysinc.com
M M - MoSys Inc
MC8 - RAM type MC8 - SRAM pipeline burst
MD9 - MDRAM
MG8 - SGRAM
E - Series 02 - ?
03 - pipelined
04 - flow through
09 - ?
256K32 - memory density 512K32 - 512kBit x 32
256K32 - 256kBit x 32
128K32 - 128kBit x 32
64K32 - 64kBit x 32
Q - package option L - 100pin Lead Quad Flat Package
Q - PQFP
C - voltage C - 5.0V
LC - 3.3V low voltage
R - mirror image [none] - standard
R - reverse
10 - min cycle time 16R6 - 16.0ns (60MHz)
15 - 15.0ns (66MHz)
12 - 12.0ns (83MHz)
10 - 10.0ns (100MHz)
8 - 8.0ns (150MHz)
7R5 - 7.0ns (133MHz)
6R6 - 6.5ns (150MHz)
6 - 6.0ns (166MHz)
E - Temperature [none] 0 to 70°C (standard)
I - -40 to 85°C (industrial)
E - -40 to 125°C (extreme)
C - die revision A/B/C ...
9400 - date of manufacture 94 - year of manufacture
00 - week of manufacture
D20B9400AAE - Serialization code ?