MoSys RAM chip marking |
MOSYS |
www.mosysinc.com |
M |
M - MoSys Inc |
MC8 - RAM type |
MC8 - SRAM pipeline burst
MD9 - MDRAM
MG8 - SGRAM |
E - Series |
02 - ?
03 - pipelined
04 - flow through
09 - ? |
256K32 - memory density |
512K32 - 512kBit x 32
256K32 - 256kBit x 32
128K32 - 128kBit x 32
64K32 - 64kBit x 32 |
Q - package option |
L - 100pin Lead Quad Flat Package
Q - PQFP |
C - voltage |
C - 5.0V
LC - 3.3V low voltage |
R - mirror image |
[none] - standard
R - reverse |
10 - min cycle time |
16R6 - 16.0ns (60MHz)
15 - 15.0ns (66MHz)
12 - 12.0ns (83MHz)
10 - 10.0ns (100MHz)
8 - 8.0ns (150MHz)
7R5 - 7.0ns (133MHz)
6R6 - 6.5ns (150MHz)
6 - 6.0ns (166MHz) |
E - Temperature |
[none] 0 to 70°C (standard)
I - -40 to 85°C (industrial)
E - -40 to 125°C (extreme) |
C - die revision |
A/B/C ... |
9400 - date of manufacture |
94 - year of manufacture
00 - week of manufacture |
D20B9400AAE - Serialization code |
? |