| Micron RAM chip marking |
| MICRON |
www.micron.com |
| MT / MOSEL |
MT - Micron Technology |
| 4 - RAM type |
28 - Flash (dual supply)
4 - DRAM
41 - SGRAM
46 - SDRAM DDR
48 - SDRAM sync
4A - SDRAM DDR-2
57 - DRAM DDR sync
58 - SRAM sync burst
59 - SRAM sync lastwrite
63 - ? |
| V - voltage |
V - 2.5V
L - 3.3V
[blank] - 5.0V |
| C - Manufacturing process |
C - CMOS
B - BiCMOS |
| 16 - bit organization |
1M16 - 1MBit x 16
2M8 - 2MBit x 8
4M4 - 4MBit x 4
8M8 - 8MBit x 8
16M8 - 16MBit x 8
64K18 - 64kBit x 18
64K36 - 64kBit x 36
32K36 - 32kBit x 36 |
1004 - 4MBit x 1, FP
4001 - 1MBit x 4, FP
4007 - 1MBit x 4 , EDO, 1K refresh
16270 - 256kBit x 16, EDO
16257 - 256kBit x 16, FP
32128 - 128kBit x 32 |
| 2 - refresh |
E5 - 1K refresh - EDO
E7 - 2K refresh - EDO
E8 - 2K refresh - EDO
E9 - 4K refresh - EDO
A1 - 4K refresh - Fast Page
A2 - tWR = 2 clk
B1 - 2K refresh - Fast Page
B2 - 3.3 & 5.0 Volt signals
B3 - 3.3 Volt signals only
C3 - 1K refresh - Fast Page |
| J - package option |
J - SOJ
Q - QFP
TG - 54pin TSOP II
FB - 60pin FBGA (8mm x 16mm)
FC - 60pin FBGA (11mm x 13mm) |
| 6 - min cycle time |
5 - 50ns
6 - 60ns
7 - 70ns
75 - 7.5ns @ CL = 3 (PC133)
7E - 7.5ns @ CL = 2 (PC133)
8E - 10.0ns @ CL = 2 (PC100)
10 - 10ns |
| C - die revision |
A/B/C ... |
| 9812 - date of manufacture |
98 - year of manufacture
12 - week of manufacture |
| 7HT7 - Serialization code |
? |
