| LGS RAM chip marking |
| GoldStar / LGS / SEMICON |
Lucky GoldStar Semiconductor [www.lgs.com]
Merged with Hyundai Electronics to Hynix |
| GM / SDS |
GM - GoldStar Memory
SDS - LG Semicon |
| 71 - RAM type |
71 - DRAM EDO / FastPage
72 - SDRAM
82 - ? |
| C - voltage |
C - 5.0V
V - 3.3V low voltage
VL - 2.35V ultra low voltage |
| S - refresh |
[none] - standard
S - self refresh |
| 16 - memory density |
DRAM
16 - 16M, 4k refresh
17 - 16M, 2k refresh
18 - 16M. 1k refresh
64 - 64M, 8k refresh
65 - 64M, 4k refresh |
SDRAM
?
|
| 16 - bit organization |
DRAM
10 - x1
16 - x16 (2CAS)
17 - x16 (2WE)
32 - x32 (2CAS)
33 - x32 (2WE)
34 - x32 (4CAS
40 - x4
41 - x4 (4CAS)
80 - x8
82 - x8 (4CAS)
16 - x16 |
SDRAM
6162 = 1Meg x 16 (16MBit)
642 = 4Meg x 4 (16MBit)
682 = 2Meg x 2 (16MBit)
8164 = 8Meg x 16 (128MBit)
844 = 32Meg x 4 (128MBit)
884 = 16Meg x 8 (128MBit)
6164 = 16Meg x 16(256MBit)
644 = 64Meg x 4 (256MBit)
684 = 32Meg x 8 (256MBit)
6164 = 4Meg x 16 (64MBit)
644 = 16Meg x 4 (64MBit)
684 = 8Meg x 8 (64MBit) |
| 1 - RAM type |
0 - FastPage
1 - SDRAM
3 - EDO
5 - EDO |
| C - die revision |
[none]/A/B/C ... |
| J - package option |
[blank] - plastic DIP
J - SOJ
T - TSOP
R - TSOP reverse |
| 70 - min cycle time |
5 - 50ns
6 - 60ns
7 - 70ns
8 - 80ns
10 - 100ns
|
10K - 66MHz (15ns/9ns/2-2-2)
7K - 100MHz (10ns/6ns/2-2-2)
7J - 100MHz (10ns/6ns/3-2-2)
8 - 125MHz (8ns/6ns/3-3-3)
75 - 133MHz (7.5ns/5.4ns/3-3-3)
7 - 143MHz (7ns/5.4ns/3-3-3) |
| 9444 - date of manufacture |
94 - year of manufacture
44 - week of manufacture |
| 2017 - Serialization code |
? |
