Hyundai Electronics / hynix Semiconductors RAM chip marking & reference


On chip top HY57V161610D
TC-7
9909A KOREA
hynix 134A
HY5DV641622AT-36
KOREA
  HY57V56420BT
 
  HY534256AJ-70
 
  HY51V42260-60
9705A KOREA

Hyundai / hynix RAM chip marking
HYUNDAI / hynix Hyundai www.hea.com
Merged with Lucky Goldstar Semi [LGS] 1999, Renamed to Hynix www.hynix.com
HY HY - Hyundai / hynix
57 - RAM type 51 - DRAM
53 - DRAM (EDO ?)
57 - SDRAM
5D - SDRAM DDR
62 - SRAM slow / superslow
63 - SRAM fast
64 - SRAM pseudo
V - voltage [blank] - 5.0V
V - 3.3V
Y - 3.0V
U - 2.5V
W - 2.5V (VDDQ=1.8V)
VL - 2.35V
S - 1.8V
S - refresh S - self refresh
[none] - standard
16 - memory density 3C - 256KBit
31 - 1MBit
34 - 1MBit
4 - 4MBit, 1k refresh
41 - 4MBit
42 - 4MBit
16 - 16M, 4k refresh
17 - 16M, 2k refresh
18 - 16M, 1k refresh
32 - 32M, 4k refresh
64 - 64M, 8k refresh
65 - 64M, 4k refresh
129 - 128M, 4k refresh
28 - 128M, 4k refresh
2A - 128M, 4k refresh TCSR
257 - 256M, 8k refresh
56 - 256M, 8k refresh
12 - 512M, 8k refresh
16 - bit organization 40 - x4
41 - x4 (4CAS)
80 - x8
16 - x16
17 - x16 (2CAS)
18 - x16 (2WE)
32 - x32 (2CAS)
33 - x32 (2WE)
34 - x32 (4CAS)
L - bank / interface 1 - 2banks
2 - 4 banks
0 - LVTTL
1 - SSTL
2 - SSTL2
5 - RAM type 0 - FastPage
3 - EDO
4 - EDO
5 - EDO
C - die revision Fab Ichon: [blank] / A / B / C / D ...
Fab Cheong-ju: H / HA / HB / HC / HD ...
J - package option J - SOJ
T - TSOP-II
TC - TSOP-II 400mil
TQ - TQFP 100pin
R - TSOP reverse
S - stack package (Hynix)
K - stack package (M&T)
J - stack package (others)
7 - min cycle time 50 - 50ns
60 - 60ns
70 - 70ns
15 - 15ns (66MHz)
12 - 12ns (83MHz)
10 - 10ns (100MHz)
10s - 10ns (100MHz CL3)
10p - 10ns (100MHz CL2&3)
8 - 8ns (125MHz)
75 - 7.5ns (133MHz)
7 - 7ns (143MHz)
6 - 6ns (166MHz)
55 - 5.5ns (183MHz)
5 - 5ns (200MHz)
A - RAS/CAS [none] - PC66 [2-2-2]
A - PC100 [3-2-3]
B - PC100 [2-2-2]
C - PC100 [2-2-2]
D - PC100 [2-2-2]
9909 - date of manufacture 99 - year of manufacture
09 - week of manufacture
134A - Serialization code ?